Electron Transport in Nanostructures and Mesoscopic Devices

An Introduction

Electron Transport in Nanostructures and Mesoscopic Devices

Thierry Ouisse, ENSPG, Grenoble, France

ISBN : 9781848210509

Publication Date : June 2008

Hardcover 400 pp

210.00 USD



This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In such quantum systems, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material systematically kept at the most accessible level. The various physical effects are clearly differentiated, ranging from transmission formalism to the Coulomb blockade effect and current noise fluctuations. Practical exercises and solutions have also been included to facilitate the reader’s understanding.


1. Introduction.
2. Some Useful Concepts and Reminders.
3. Ballistic Transport and Transmission Conductance.
4. S-matrix Formalism.
5. Tunneling and Detrapping.
6. An Introduction to Current Noise in Mesoscopic Devices.
7. Coulomb Blockade Effect.
8. Specific Interference Effects.
9. Graphene and Carbon Nanotubes.
10. Appendices.

About the authors/editors

Thierry Ouisse was a researcher at CNRS (Centre National de la Recherche Scientifique, France), and is now professor at PHELMA (Grenoble INP). His research interests are in the area of semiconductor physics, mesoscopic device physics, near-field microscopy and wide bandgap semiconductors. He is the author of about 150 research papers and communications in these fields.