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Secure Connected Objects

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Banach, Fréchet, Hilbert and Neumann Spaces

Analysis for PDEs Set Volume 1

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Semi-Markov Migration Models for Credit Risk

Stochastic Models for Insurance Set Volume 1

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Human Exposure to Electromagnetic Fields

From Extremely Low Frequency (ELF) to Radio Frequency

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Enterprise Interoperability


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Data Treatment in Environmental Sciences

Multivaried Approach

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From Pinch Methodology to Pinch-Exergy Integration of Flexible Systems

Thermodynamics Energy, Environment, Economy Set

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Exterior Algebras

Elementary Tribute to Grassmann's Ideas

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Nonlinear Theory of Elastic Plates

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Cognitive Approach to Natural Language Processing

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Silicon Carbide One-dimensional Nanostructures

FOCUS Series in Nanoscience and Nanotechnology

Laurence Latu-Romain, Joseph Fourier University, Grenoble, France Maelig Ollivier, Imperial College London, UK

ISBN: 9781848217973

Publication Date: January 2015   Hardback   148 pp.

80.00 USD

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One-dimensional (1D) nanostructures from silicon carbide (SiC) are attracting the scientific community because their combination of excellent intrinsic properties with low dimensionality has tremendous potential for breakthrough applications. Silicon carbide does indeed possess very interesting physicochemical and electronic properties, particularly in its biocompatibility. 1D nanostructures such as nanowires and nanotubes are remarkable due to their high surface area relative to their volume, as well as their unique characteristics in comparison to those of bulk materials.
Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion. The potential applications of these particular nano-objects is also discussed, with regards to their eventual integration in biology, energy and electronics.


1. Properties of SiC-based One-dimensional Nanostructures.
2. State of the Art of the Growth of SiC-1D Nanostructures.
3. An Original Growth Process: The Carburization of Si Nanowires.
4. SiC-Based One-dimensional Nanostructure Technologies.

About the Authors

Laurence Latu-Romain is Associate Professor at the Joseph Fourier University in Grenoble, France. Her research interests include semiconductor materials and nanostructures, from their design and growth to their characterization.
Maelig Ollivier is Associate Researcher at Imperial College London, UK in the Department of Materials, with interests in metallurgy.


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