General

Authors

Search


Committee login



 
 

 


 

 

Forthcoming

Small thumbnail

Baidu SEO

Challenges and Intricacies of Marketing in China

Small thumbnail

Asymmetric Alliances and Information Systems

Issues and Prospects

Small thumbnail

Technicity vs Scientificity

Complementarities and Rivalries

Small thumbnail

Freshwater Fishes

250 Million Years of Evolutionary History

Small thumbnail

Biostatistics and Computer-based Analysis of Health Data using SAS

Biostatistics and Health Science Set

Small thumbnail

Predictive Control

Small thumbnail

Fundamentals of Advanced Mathematics 1

Categories, Algebraic Structures, Linear and Homological Algebra

Small thumbnail

Swelling Concrete in Dams and Hydraulic Structures

DSC 2017

Small thumbnail

The Chemostat

Mathematical Theory of Microorganims Cultures

Small thumbnail

Earthquake Occurrence

Short- and Long-term Models and their Validation

Small thumbnail

Silicon Non-Volatile Memories

Paths of Innovation

Barbara De Salvo, LETI-CEA, France.

ISBN: 9781848211056

Publication Date: August 2009   Hardback   256 pp.

155.00 USD


Add to cart

eBooks


Ebook Ebook

Description

Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different “evolutionary paths” based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. “Disruptive paths” based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

Contents

1. Introduction.
2. Semiconductor Industry Overview.
3. Research on Advanced Charge Storage Memories.
4. Future Paths of Innovation.
5. Conclusions.

About the Authors

Barbara De Salvo is a scientist at LETI (Electronics and Information Technology Laboratory of CEA, France). She currently manages the advanced memory group, covering the engineering and physics of new technologies for ULSI-circuits.

Downloads

DownloadTable of Contents - PDF File - 86 Kb

DownloadSample Chapter - PDF File - 65 Kb

Related Titles



































0.03054 s.