Simulation of Transport in Nanodevices
Publication Date: December 2016 Hardback 396 pp.
The research field of nanoelectronics has undergone an impressive development in the last decade. This includes the further miniaturization of conventional silicon transistors by the electronics industry, and also strong academic research activity on new types of devices exploiting quantum effects occurring at the nanoscale. Nanoelectronics also involves an increasing variety of materials, from nanowires to 2D materials and quantum dots. This leads to new challenges for simulation.
This book presents the modern methods involved in the simulation of nanodevices. The first chapters are devoted to atomic scale modeling, which is needed to obtain an accurate description of the electronic and vibrational properties of new materials and of their interfaces and defects. The other chapters present a broad variety of methods for simulating electron transport in nanodevices, based on quantum or semi-classical formalisms. This book is mainly intended for students and young researchers looking for an overview of the available simulation methods.
1. Introduction: Nanoelectronics, Quantum Mechanics, and Solid State Physics by Philippe Dollfus and François Triozon
2. Electronic Transport: Electrons, Phonons and Their Coupling within the Density Functional Theory by Nathalie Vast, Jelena Sjakste, Gaston Kané and Virginie Trinité
3. Electronic Band Structure: Empirical Pseudopotentials, k . p and Tight-Binding Methods by Denis Rideau, François Triozon and Philippe Dollfus
4. Relevant Semiempirical Potentials for Phonon Properties by Sebastian Volz
5. Introduction to Quantum Transport by François Triozon, Stephan Roche and Yann-Michel Niquet
6. Non-Equilibrium Green’s Function Formalism by Michel Lannoo and Marc Bescond
7. Electron Devices Simulation with Bohmian Trajectories by Guillermo Albareda, Damiano Marian, Abdelilah Benali, Alfonso Alarcón, Simeon Moises and Xavier Oriols
8. The Monte Carlo Method for Wigner and Boltzmann Transport Equations by Philippe Dollfus, Damien Querlioz and Jérôme Saint Martin
About the Authors
François Triozon has been a permanent researcher since 2005 at CEA-LETI, in Grenoble, France. His research focuses on the simulation of electron transport in nanodevices, using semi-classical and quantum methods.
Philippe Dollfus is currently Director of Research (CNRS) at the Center for Nanoscience and Nanotechnology, Orsay, France. His research activity covers different fields of computational nanoelectronics.